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IRF640N Metal Oxide Surface Mount Schottky Diode Schottky Diode Rectifier TO 220AB

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IRF640N Metal Oxide Surface Mount Schottky Diode Schottky Diode Rectifier TO 220AB

Brand Name : IR

Model Number : IRF640N

Place of Origin : CHINA

MOQ : 10 PCS

Price : Negotiation

Payment Terms : T/T, Western Union ， ESCROW

Supply Ability : 10000PCS

Delivery Time : STOCK

Packaging Details : TUBE

Categories : Transistors - FETs, MOSFETs - Single

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 200V

Current - Continuous Drain (Id) @ 25°C : 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 150 mOhm @ 11A, 10V

Vgs(th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 67nC @ 10V

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IRF640N General Purpose Rectifier Diode N-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-220AB

Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application.
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Product Attributes	Select All
Categories	Discrete Semiconductor Products
	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	150 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	67nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1160pF @ 25V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB

IRF640N Metal Oxide Surface Mount Schottky Diode Schottky Diode Rectifier TO 220AB

Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-0755-82539981

Product Tags:

high current schottky diode

low power zener diode

IRF640N Metal Oxide Surface Mount Schottky Diode Schottky Diode Rectifier TO 220AB Images

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